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2N7002 - N-channel FET

Download the 2N7002 datasheet PDF. This datasheet also covers the 2N7000 variant, as both devices belong to the same n-channel fet family and are provided as variant models within a single manufacturer datasheet.

Description

These N

produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance while providing rugged, reliable, and fast switching performance.

Features

  • High Density Cell Design for Low RDS(on).
  • Voltage Controlled Small Signal Switch.
  • Rugged and Reliable.
  • High Saturation Current Capability.
  • ESD Protection Level: HBM > 100 V, CDM > 2 kV.
  • This Device is Pb.
  • Free and Halogen Free DATA SHEET www. onsemi. com D G S 123 TO.
  • 92 CASE 135AN 1 2 3 1.
  • Source 2.
  • Gate 3.
  • Drain TO.
  • 92 CASE 135AR.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N7000_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N7002
Manufacturer onsemi
File Size 244.78 KB
Description N-channel FET
Datasheet download datasheet 2N7002 Datasheet

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Other Datasheets by onsemi

Part Number Description
2N7002DW N-Channel FET
2N7002E Small Signal MOSFET
2N7002K Small-Signal MOSFET
2N7002KW N-Channel FET
2N7002L N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Enhancement Mode Field Effect Transistor 2N7000, 2N7002, NDS7002A Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features  High Density Cell Design for Low RDS(on)  Voltage Controlled Small Signal Switch  Rugged and Reliable  High Saturation Current Capability  ESD Protection Level: HBM > 100 V, CDM > 2 kV  This Device is Pb−Free and Halogen Free DATA SHEET www.onsemi.
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