2N7002 Datasheet Text
N-Channel Enhancement Mode Field Effect Transistor
2N7000, 2N7002, NDS7002A
Description These N- channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on- state resistance while providing rugged, reliable, and fast switching performance. These products are particularly suited for low- voltage, low- current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- High Density Cell Design for Low RDS(on)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability
- ESD Protection Level: HBM > 100 V, CDM > 2 kV
- This Device is Pb- Free and Halogen Free
DATA SHEET .onsemi.
D
G S
123
TO- 92 CASE 135AN
1 2 3
1
- Source 2
- Gate 3
- Drain
TO- 92 CASE 135AR
MARKING DIAGRAM
$Y&Z&3 2N 7000
$Y
= onsemi Logo
&Z
= Assembly Plant Code
&3
= Date Code
2N7000 = Specific Device Code...
